Job Information
Global Foundries PhD thesis on Next Generation Magnetic Storage Solutions (STT-MRAM): Development of innovative, non-destructive MTJ characterizations for inline process control of integrated process wafers in Saxony, Germany
About GF
GlobalFoundries® Inc. (GF®) is one of the world's leading semiconductor manufacturers. GF redefines innovation and semiconductor manufacturing by developing and delivering feature-rich process technology solutions with leading performance in all growth markets. GF offers a unique mix of design, development and manufacturing services. With a talented and diverse team and manufacturing locations in the U.S., Europe and Asia, GF is a trusted technology provider to its global customers. GF employs approximately 13,000 people, including more than 3,000 in Dresden, Germany.
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PhD thesis on Next Generation Magnetic Storage Solutions (STT-MRAM): Development of innovative, non-destructive MTJ characterizations for inline process control of integrated process wafers
The GlobalFoundries Ph.D. program provides Ph.D. students with the unique opportunity to help shape the integration of embedded non-volatile memories in leading-edge logic semiconductors. In collaboration with globally based teams, the work is based on an already existing, embedded STT-MRAM technology in the 22nm FDSOI technology. The aim is to further develop and optimize measurement techniques for the characterization of MTJ stack parameters, among others, through the implementation of advanced techniques such as current-in-plane tunneling (CIPT), photo-magneto-optical Kerr effect ( pMOKE ) and ferromagnetic resonance (FMR) on fully processed wafers for timely inline process control. The extraction of critical MTJ-relevant parameters will be carried out in relation to electrical and yield-relevant key parameters.
This position is designed for 3 years. For this thesis, we are looking for a research candidate who would like to take on a coordinating role in the joint project as well as align his research work in relation to mass production topics . You will support the team with the further development of inline measurement methods for the magnetic and electrical characterization of different MTJ stacks. This work will be organized and coordinated by you independently in close cooperation with the responsible department . You conduct systematic studies to evaluate the repeatability of measurements, analyze and interpret their results in order to gain further insights into the behavior of MTJ stack parameters. You identify sources of variability. The results are systematically documented by you and summarized as part of regular reporting. GF supports the publication of scientific results in leading journals and the protection of intellectual property through the filing of patents.
Required Qualifications
You have completed electrical engineering, physics or a comparable degree or are about to graduate.
You have knowledge in the field of semiconductor devices and how they work.
Knowledge of semiconductor technology and semiconductor manufacturing is an advantage.
Ideally, you have basic knowledge of magnetic non-volatile semiconductor memories.
In-depth expertise in the field of solid-state physics and magnetic thin films is a plus .
A confident handling of office programs for word processing and presentation is required .
You have a high degree of independence and flexibility in terms of time to communicate with the global teams.
You are communicative and enjoy working in a team.
Good written and spoken English skills round off your profile.
Start Date
Immediately, 3 years contract.
Application
Please apply with your complete documents and indicate your possible start date and duration of the job:
Cover letter
Curriculum vitae
Current Certificate of Enrollment
Up-to-date transcript of records
Diploma
Employment references
Information about our benefits you can find here: https://gf.com/careers/opportunities-in-europe/
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